The PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz t frequency band. Features include input and output matching, high gain c and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent u thermal p.
include input and output matching, high gain c and thermally-enhanced package with earless flange. Manufactured with
Wolfspeed's advanced LDMOS process, this device provides excellent
u thermal performance and superior reliability d Single-carrier WCDMA Drive-up o VDD = 28 V, IDQ= 900 mA, ƒ = 2170 MHz
3GPP WCDMA signal, PAR = 10 dB,
r 3.84 MHz BW
p 24
60
d Gain
20
40
Peak/Average Ratio, Gain (dB) Efficiency (%)
ue 16
20
Efficiency
in 12
0
t 8
-20
n PAR @ 0.01% CCDF
o 4
-40
PXFE211507FC Package H-37248G-4/2
Features
• Broadband internal input and output matching
• Typical Pulse.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PXFE181507FC |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
2 | PXF4333 |
Infineon Technologies AG |
ABM 3G ATM Buf fer Manager | |
3 | PXF4336 |
Infineon Technologies AG |
ABM Premium ATM Buf fer Manager | |
4 | PXFC191507FC |
MACOM |
150W High Power RF LDMOS FET | |
5 | PXFC191507FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
6 | PXFC192207FH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
7 | PXFC192207FH |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
8 | PXFC192207NF |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
9 | PXFC192207SH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
10 | PXFC193808SV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
11 | PXFC211507SC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
12 | PXFC212551SC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |