Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and therm.
Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package 1.3 Applications DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 Ptot total power dissipation Tmb = 25 °C; see Figur.
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PSMN020-100YS |
nexperia |
N-channel MOSFET | |
2 | PSMN020-100YS |
NXP Semiconductors |
MOSFET | |
3 | PSMN020-150W |
Philips |
N-channel TrenchMOS transistor | |
4 | PSMN020-30MLC |
nexperia |
N-channel MOSFET | |
5 | PSMN020-30MLC |
NXP Semiconductors |
MOSFET | |
6 | PSMN021-100YL |
nexperia |
N-channel MOSFET | |
7 | PSMN022-30BL |
NXP Semiconductors |
MOSFET | |
8 | PSMN022-30BL |
nexperia |
N-channel MOSFET | |
9 | PSMN022-30PL |
nexperia |
N-channel MOSFET | |
10 | PSMN022-30PL |
NXP |
MOSFET | |
11 | PSMN023-40YLC |
NXP Semiconductors |
MOSFET | |
12 | PSMN025-100D |
Philips |
N-channel TrenchMOS transistor |