PSMN020-100YS - nexperia

PSMN020-100YS N-channel MOSFET

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • Advanced TrenchMOS provides low RDSon and low gate charge • High efficiency gains in switching power converters • Improved mechanical and thermal.

Features

• Advanced TrenchMOS provides low RDSon and low gate charge
• High efficiency gains in switching power converters
• Improved mechanical and thermal characteristics
• LFPAK provides maximum power density in a Power SO8 package 3. Applications
• DC-to-DC converters
• Lithium-ion battery protection
• Load switching
• Motor control
• Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Tj ju.