N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PSMN020-150W is supplied in the SOT429 (TO247) conventional leaded package. PINNING PIN 1 2 3 tab gate drain sourc.
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• High thermal cycling performance
• Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 150 V ID = 73 A
g
RDS(ON) ≤ 20 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PSMN020-150W is supplied in the SOT429 (TO247) conventional leaded package.
PINNING
PIN 1 2 3 tab gate drain source drain DESCR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PSMN020-100YS |
nexperia |
N-channel MOSFET | |
2 | PSMN020-100YS |
NXP Semiconductors |
MOSFET | |
3 | PSMN020-30MLC |
nexperia |
N-channel MOSFET | |
4 | PSMN020-30MLC |
NXP Semiconductors |
MOSFET | |
5 | PSMN021-100YL |
nexperia |
N-channel MOSFET | |
6 | PSMN022-30BL |
NXP Semiconductors |
MOSFET | |
7 | PSMN022-30BL |
nexperia |
N-channel MOSFET | |
8 | PSMN022-30PL |
nexperia |
N-channel MOSFET | |
9 | PSMN022-30PL |
NXP |
MOSFET | |
10 | PSMN023-40YLC |
NXP Semiconductors |
MOSFET | |
11 | PSMN025-100D |
Philips |
N-channel TrenchMOS transistor | |
12 | PSMN025-80YL |
nexperia |
N-channel MOSFET |