Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 1.3 Applications DC-to-DC converters .
High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Con.
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a w.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PSMN022-30BL |
NXP Semiconductors |
MOSFET | |
2 | PSMN022-30BL |
nexperia |
N-channel MOSFET | |
3 | PSMN020-100YS |
nexperia |
N-channel MOSFET | |
4 | PSMN020-100YS |
NXP Semiconductors |
MOSFET | |
5 | PSMN020-150W |
Philips |
N-channel TrenchMOS transistor | |
6 | PSMN020-30MLC |
nexperia |
N-channel MOSFET | |
7 | PSMN020-30MLC |
NXP Semiconductors |
MOSFET | |
8 | PSMN021-100YL |
nexperia |
N-channel MOSFET | |
9 | PSMN023-40YLC |
NXP Semiconductors |
MOSFET | |
10 | PSMN025-100D |
Philips |
N-channel TrenchMOS transistor | |
11 | PSMN025-80YL |
nexperia |
N-channel MOSFET | |
12 | PSMN026-80YS |
nexperia |
N-channel MOSFET |