Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High reliability Power SO8 package, qualified to 175°C • Low parasitic inductance • Optimised for 4.5V Gate drive utilising NextPower Superjunction te.
• High reliability Power SO8 package, qualified to 175°C
• Low parasitic inductance
• Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
• Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications
• DC-to-DC converters
• Load switching
• Server power supplies
• Synchronous buck regulator 1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PSMN020-100YS |
nexperia |
N-channel MOSFET | |
2 | PSMN020-100YS |
NXP Semiconductors |
MOSFET | |
3 | PSMN020-150W |
Philips |
N-channel TrenchMOS transistor | |
4 | PSMN020-30MLC |
nexperia |
N-channel MOSFET | |
5 | PSMN020-30MLC |
NXP Semiconductors |
MOSFET | |
6 | PSMN021-100YL |
nexperia |
N-channel MOSFET | |
7 | PSMN022-30BL |
NXP Semiconductors |
MOSFET | |
8 | PSMN022-30BL |
nexperia |
N-channel MOSFET | |
9 | PSMN022-30PL |
nexperia |
N-channel MOSFET | |
10 | PSMN022-30PL |
NXP |
MOSFET | |
11 | PSMN025-100D |
Philips |
N-channel TrenchMOS transistor | |
12 | PSMN025-80YL |
nexperia |
N-channel MOSFET |