Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits • Advanced TrenchMOS provides low RDSon and low gate charge • Logic level gate operation • Avalanche rated, 100% tested • LFPAK provides .
• Advanced TrenchMOS provides low RDSon and low gate charge
• Logic level gate operation
• Avalanche rated, 100% tested
• LFPAK provides maximum power density in a Power SO8 package
3. Applications
• Synchronous rectification in power supply equipment
• Chargers & adaptors with Vout < 10 V
• Fast charge & USB-PD applications
• Battery powered motor control
• LED lighting & TV backlight
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PSMN025-100D |
Philips |
N-channel TrenchMOS transistor | |
2 | PSMN020-100YS |
nexperia |
N-channel MOSFET | |
3 | PSMN020-100YS |
NXP Semiconductors |
MOSFET | |
4 | PSMN020-150W |
Philips |
N-channel TrenchMOS transistor | |
5 | PSMN020-30MLC |
nexperia |
N-channel MOSFET | |
6 | PSMN020-30MLC |
NXP Semiconductors |
MOSFET | |
7 | PSMN021-100YL |
nexperia |
N-channel MOSFET | |
8 | PSMN022-30BL |
NXP Semiconductors |
MOSFET | |
9 | PSMN022-30BL |
nexperia |
N-channel MOSFET | |
10 | PSMN022-30PL |
nexperia |
N-channel MOSFET | |
11 | PSMN022-30PL |
NXP |
MOSFET | |
12 | PSMN023-40YLC |
NXP Semiconductors |
MOSFET |