Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Phototransistors PNZ121S Silicon NPN Phototransistor Unit : mm For optical control systems Features Stable operations in high illuminance region Low dark current 12.5 min. 4.1±0.3 2.0±0.2 ø3.0±0.2 Fast response : tr = 1 µs (typ.) Small size (ø 3) ceramic package ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to .
Stable operations in high illuminance region Low dark current
12.5 min. 4.1±0.3 2.0±0.2
ø3.0±0.2
Fast response : tr = 1 µs (typ.) Small size (ø 3) ceramic package
ø0.3±0.05 ø0.45±0.05
0.9±0.15
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 50
–25 to +85
–30 to +100 Unit V V mA mW ˚C ˚C
2 1 1: Emitter 2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Dark current Collector.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PNZ123S |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 2 | PNZ126S |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 3 | PNZ1270 |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 4 | PNZ102F |
Panasonic Semiconductor |
Silicon NPN Phototransistors |
|
| 5 | PNZ107F |
Panasonic Semiconductor |
Silicon NPN Phototransistors |
|
| 6 | PNZ108CL |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 7 | PNZ108F |
Panasonic Semiconductor |
Silicon NPN Phototransistors |
|
| 8 | PNZ109CL |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 9 | PNZ109F |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 10 | PNZ109L |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 11 | PNZ150L |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 12 | PNZ154 |
Panasonic |
Silicon planar type Phototransistors |
|