PNZ121S |
Part Number | PNZ121S |
Manufacturer | Panasonic Semiconductor |
Description | Phototransistors PNZ121S Silicon NPN Phototransistor Unit : mm For optical control systems Features Stable operations in high illuminance region Low dark current 12.5 min. 4.1±0.3 2.0±0.2 ø3.0±0.2 ... |
Features |
Stable operations in high illuminance region Low dark current
12.5 min. 4.1±0.3 2.0±0.2
ø3.0±0.2
Fast response : tr = 1 µs (typ.) Small size (ø 3) ceramic package
ø0.3±0.05 ø0.45±0.05
0.9±0.15
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 50 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C 2 1 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector... |
Document |
PNZ121S Data Sheet
PDF 44.19KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | PNZ123S |
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2 | PNZ126S |
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4 | PNZ102F |
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5 | PNZ107F |
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