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Phototransistors PNZ123S Silicon NPN Phototransistor Unit : mm For optical control systems 4.1±0.3 2.0±0.2 12.5 min. ø3.0±0.2 Can be combined with LN62S to form an photo interrupter Features High sensitivity Low dark current Fast response : tr = 3.5 µs (typ.) Small size (ø 3) ceramic package ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta =.
High sensitivity Low dark current Fast response : tr = 3.5 µs (typ.) Small size (ø 3) ceramic package
ø0.3±0.05 ø0.45±0.05
0.9±0.15
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 50
–25 to +85
–30 to +100 Unit V V mA mW ˚C ˚C
2
1 1: Emitter 2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half an.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PNZ121S |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 2 | PNZ126S |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 3 | PNZ1270 |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 4 | PNZ102F |
Panasonic Semiconductor |
Silicon NPN Phototransistors |
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| 5 | PNZ107F |
Panasonic Semiconductor |
Silicon NPN Phototransistors |
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| 6 | PNZ108CL |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
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| 7 | PNZ108F |
Panasonic Semiconductor |
Silicon NPN Phototransistors |
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| 8 | PNZ109CL |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
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| 9 | PNZ109F |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
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| 10 | PNZ109L |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
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| 11 | PNZ150L |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
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| 12 | PNZ154 |
Panasonic |
Silicon planar type Phototransistors |
|