PNZ102F - Panasonic Semiconductor

PNZ102F Silicon NPN Phototransistors

Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors PNA1401LF Unit : mm ø4.6±0.15 Glass window For optical control systems Features Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ.) Fast response : tr, tf = 3 µs (typ.) Wide directional sensitivity Base pin for easy circuit design (PNZ102F) 4.5±0.2 12.7.

Features

Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ.) Fast response : tr, tf = 3 µs (typ.) Wide directional sensitivity Base pin for easy circuit design (PNZ102F) 4.5±0.2 12.7 min. 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 2 1 Absolute Maximum Ratings (Ta = 25˚C) ø5.75 max. Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature
* Symbol VCEO VCBO
* VECO VEBO
* IC PC Topr Tstg Ratin.