PNZ150L - Panasonic Semiconductor

PNZ150L Silicon NPN Phototransistor

Phototransistors PNZ150L Silicon NPN Phototransistor Unit : mm ø3.5±0.2 4.8±0.3 2.4 2.4 Not soldered For optical control systems Features High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current Small size, thin side-view type package 4.5±0.3 4.2±0.3 2.3 1.9 42.7±1.0 2.2 14.5 2.95 1.0 2-1.12 2-0.45±0.15 0.4±0.15 2-0..

Features

High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current Small size, thin side-view type package 4.5±0.3 4.2±0.3 2.3 1.9 42.7±1.0 2.2 14.5 2.95 1.0 2-1.12 2-0.45±0.15 0.4±0.15 2-0.6±0.15 2-0.45±0.15 1.2 1 2 2.54 R1.75 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Ratings 20 20 100
  –25 to +85
  –30 to +100 Unit V mA mW ˚C ˚C 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter.