PN168 - Panasonic Semiconductor

PN168 Silicon NPN Phototransistor

Phototransistors PNA1801L (PN168) Silicon NPN Phototransistor Unit : mm Not soldered 2.0 max. For optical control systems Features High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Small size, high output power, low cost ø 3 plastic package 15.0±1.0 4.5±0.3 ø3.8±0.2 ø3.0±0.2 5.0±0.2 0.6 2-0.8 max. 2-0.5±0.1 2 0.5±0.1 1.0 (1.5).

Features

High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Small size, high output power, low cost ø 3 plastic package 15.0±1.0 4.5±0.3 ø3.8±0.2 ø3.0±0.2 5.0±0.2 0.6 2-0.8 max. 2-0.5±0.1 2 0.5±0.1 1.0 (1.5) 1 2.54 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 30 5 20 100
  –25 to +85
  –30 to +100 Unit V V mA mW ˚C ˚C 1.7 1: Emitter 2: Collector Electro-Optical Characteristics (T.