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www.DataSheet4U.com Phototransistors PNA1601M (PN166) Silicon NPN Phototransistor For optical control systems Features High sensitivity Wide spectral sensitivity, suited for detecting various kinds of LEDs 12.5±1.0 0.8 0.5 max. Gate the rest Unit : mm 2.6±0.2 C0.5 0.8 R0.55 1.4±0.2 1.2±0.2 (0.4) 2.0 0.7 2.5±0.2 1.7 Ultraminiature, thin side-view type p.
High sensitivity Wide spectral sensitivity, suited for detecting various kinds of LEDs
12.5±1.0 0.8 0.5 max. Gate the rest
Unit : mm
2.6±0.2 C0.5 0.8 R0.55 1.4±0.2 1.2±0.2 (0.4)
2.0 0.7
2.5±0.2 1.7
Ultraminiature, thin side-view type package
2-0.7
2-0.45
0.15
2
1 2.0
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Ratings 20 20 50
–25 to +65
–30 to +85 Unit V mA mW ˚C ˚C
1: Collector 2: Emitter
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Electro-Opt.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PN1608 |
Premo |
SMD Power Inductors Unshielded |
|
| 2 | PN163NC |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 3 | PN168 |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 4 | PN100 |
TAITRON |
Small Signal General Purpose Transistors |
|
| 5 | PN100 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 6 | PN100A |
Fairchild Semiconductor |
NPN Amplifier |
|
| 7 | PN100A |
TAITRON |
Small Signal General Purpose Transistors |
|
| 8 | PN1011 |
Premo |
(PN1xx) SMD Power Inductors Unshielded |
|
| 9 | PN105 |
Premo |
(PN1xx) SMD Power Inductors Unshielded |
|
| 10 | PN107 |
Panasonic Semiconductor |
(PN108) Silicon NPN Phototransistors |
|
| 11 | PN108 |
Panasonic Semiconductor |
(PN107) Silicon NPN Phototransistors |
|
| 12 | PN108CL |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|