PPJEC5V0V6TS Very Low Capacitance TVS/ESD Protection VRWM 5V Features Bidirectional ESD protection of one line IEC61000-4-2(ESD): ±15kV Air, ±8kV Contact Compliance with the capability up to ±30kV IEC61000-4-4(EFT): 40A(5/50nS) IEC61000-4-5(Lightning): 3.5A(8/20S) Low leakage current, maximum of 0.1A at rated voltage Lead free in complianc.
Bidirectional ESD protection of one line
IEC61000-4-2(ESD): ±15kV Air, ±8kV Contact Compliance with
the capability up to ±30kV
IEC61000-4-4(EFT): 40A(5/50nS)
IEC61000-4-5(Lightning): 3.5A(8/20S)
Low leakage current, maximum of 0.1A at rated voltage
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOD-523, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00005 ounces, 0.0014 grams
Marking: AA
Applications
Mobile Phones and accessories
Desktops, Se.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PJEC5V0V6FN2 |
Pan Jit International |
Very Low Capacitance TVS/ESD Protection | |
2 | PJEC3V0V1WS |
Pan Jit International |
Very Low Capacitance TVS/ESD Protection | |
3 | PJEC3V3M1FN2 |
Leiditech |
TVS DIODE | |
4 | PJE138K |
PAN JIT |
50V N-Channel MOSFET | |
5 | PJE138L |
Pan Jit International |
60V N-Channel Enhancement Mode MOSFET | |
6 | PJE5V0M1FN2 |
Pan Jit International |
Low Capacitance TVS/ESD Protection | |
7 | PJE5V0U8TB6 |
Pan Jit International |
Low Capacitance ESD Protection | |
8 | PJE8400 |
Pan Jit International |
20V N-CHANNEL MOSFET | |
9 | PJE8401 |
Pan Jit International |
20V P-CHANNEL MOSFET | |
10 | PJE8403 |
Pan Jit International |
20V P-CHANNEL MOSFET | |
11 | PJE8404 |
Pan Jit International |
30V N-Channel MOSFET | |
12 | PJE8407 |
Pan Jit International |
20V P-CHANNEL MOSFET |