PPJE8400 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 1.1A Features RDS(ON) , [email protected], [email protected]<88mΩ RDS(ON) , [email protected], [email protected]<100mΩ RDS(ON) , [email protected], [email protected]<130mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. Lead free in compliance with EU RoHS 2011/65/EU directive. Gree.
RDS(ON) , [email protected], [email protected]<88mΩ
RDS(ON) , [email protected], [email protected]<100mΩ
RDS(ON) , [email protected], [email protected]<130mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-523 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.002 grams
Marking: E00
SOT-523
Unit : inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PJE8401 |
Pan Jit International |
20V P-CHANNEL MOSFET | |
2 | PJE8403 |
Pan Jit International |
20V P-CHANNEL MOSFET | |
3 | PJE8404 |
Pan Jit International |
30V N-Channel MOSFET | |
4 | PJE8407 |
Pan Jit International |
20V P-CHANNEL MOSFET | |
5 | PJE8412 |
Pan Jit International |
30V N-Channel MOSFET | |
6 | PJE8438 |
Pan Jit International |
50V N-Channel MOSFET | |
7 | PJE8472B |
Pan Jit International |
60V N-Channel MOSFET | |
8 | PJE138K |
PAN JIT |
50V N-Channel MOSFET | |
9 | PJE138L |
Pan Jit International |
60V N-Channel Enhancement Mode MOSFET | |
10 | PJE5V0M1FN2 |
Pan Jit International |
Low Capacitance TVS/ESD Protection | |
11 | PJE5V0U8TB6 |
Pan Jit International |
Low Capacitance ESD Protection | |
12 | PJEC3V0V1WS |
Pan Jit International |
Very Low Capacitance TVS/ESD Protection |