PPJE5V0M1FN2 Low Capacitance TVS/ESD Protection VRWM 5V Features Bidirectional ESD protection of one line IEC61000-4-2(ESD): ±15kV Air, ±8kV Contact Compliance IEC61000-4-4(EFT): 20A(5/50nS) IEC61000-4-5(Lightning): 2A(8/20S) Low leakage current, maximum of 0.5A at rated voltage Lead free in compliance with EU RoHS 2011/65/EU directive. .
Bidirectional ESD protection of one line
IEC61000-4-2(ESD): ±15kV Air, ±8kV Contact Compliance
IEC61000-4-4(EFT): 20A(5/50nS)
IEC61000-4-5(Lightning): 2A(8/20S)
Low leakage current, maximum of 0.5A at rated voltage
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: DFN 2L, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00004 ounces, 0.0011 grams
Marking: 4B
Applications
Mobile Phones and accessories
Desktops, Servers and Notebook
Hand held port.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PJE5V0U8TB6 |
Pan Jit International |
Low Capacitance ESD Protection | |
2 | PJE138K |
PAN JIT |
50V N-Channel MOSFET | |
3 | PJE138L |
Pan Jit International |
60V N-Channel Enhancement Mode MOSFET | |
4 | PJE8400 |
Pan Jit International |
20V N-CHANNEL MOSFET | |
5 | PJE8401 |
Pan Jit International |
20V P-CHANNEL MOSFET | |
6 | PJE8403 |
Pan Jit International |
20V P-CHANNEL MOSFET | |
7 | PJE8404 |
Pan Jit International |
30V N-Channel MOSFET | |
8 | PJE8407 |
Pan Jit International |
20V P-CHANNEL MOSFET | |
9 | PJE8412 |
Pan Jit International |
30V N-Channel MOSFET | |
10 | PJE8438 |
Pan Jit International |
50V N-Channel MOSFET | |
11 | PJE8472B |
Pan Jit International |
60V N-Channel MOSFET | |
12 | PJEC3V0V1WS |
Pan Jit International |
Very Low Capacitance TVS/ESD Protection |