PPJE138K 50V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 50 V Current 350mA SOT-523 Features RDS(ON) , VGS@10V, ID@500mA<1.6Ω RDS(ON) , [email protected], ID@200mA<2.5Ω RDS(ON) , [email protected], ID@100mA<4.5Ω Advanced Trench Process Technology Specially Designed for Battery Operated Systems, Solid-State Relays Drivers: Relay, Displays, Memori.
RDS(ON) , VGS@10V, ID@500mA<1.6Ω
RDS(ON) , [email protected], ID@200mA<2.5Ω
RDS(ON) , [email protected], ID@100mA<4.5Ω
Advanced Trench Process Technology
Specially Designed for Battery Operated Systems, Solid-State
Relays Drivers: Relay, Displays, Memories, etc.
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case: SOT-523 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00007 ounces, 0.002 grams
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PJE138L |
Pan Jit International |
60V N-Channel Enhancement Mode MOSFET | |
2 | PJE5V0M1FN2 |
Pan Jit International |
Low Capacitance TVS/ESD Protection | |
3 | PJE5V0U8TB6 |
Pan Jit International |
Low Capacitance ESD Protection | |
4 | PJE8400 |
Pan Jit International |
20V N-CHANNEL MOSFET | |
5 | PJE8401 |
Pan Jit International |
20V P-CHANNEL MOSFET | |
6 | PJE8403 |
Pan Jit International |
20V P-CHANNEL MOSFET | |
7 | PJE8404 |
Pan Jit International |
30V N-Channel MOSFET | |
8 | PJE8407 |
Pan Jit International |
20V P-CHANNEL MOSFET | |
9 | PJE8412 |
Pan Jit International |
30V N-Channel MOSFET | |
10 | PJE8438 |
Pan Jit International |
50V N-Channel MOSFET | |
11 | PJE8472B |
Pan Jit International |
60V N-Channel MOSFET | |
12 | PJEC3V0V1WS |
Pan Jit International |
Very Low Capacitance TVS/ESD Protection |