PPJE8407 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -500mA Features Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Load switch, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechani.
Low Voltage Drive (1.2V).
Advanced Trench Process Technology
Specially Designed for Load switch, PWM Application, etc.
ESD Protected
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-523 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00007 ounces, 0.002 grams
Marking: E07
SOT-523
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PJE8400 |
Pan Jit International |
20V N-CHANNEL MOSFET | |
2 | PJE8401 |
Pan Jit International |
20V P-CHANNEL MOSFET | |
3 | PJE8403 |
Pan Jit International |
20V P-CHANNEL MOSFET | |
4 | PJE8404 |
Pan Jit International |
30V N-Channel MOSFET | |
5 | PJE8412 |
Pan Jit International |
30V N-Channel MOSFET | |
6 | PJE8438 |
Pan Jit International |
50V N-Channel MOSFET | |
7 | PJE8472B |
Pan Jit International |
60V N-Channel MOSFET | |
8 | PJE138K |
PAN JIT |
50V N-Channel MOSFET | |
9 | PJE138L |
Pan Jit International |
60V N-Channel Enhancement Mode MOSFET | |
10 | PJE5V0M1FN2 |
Pan Jit International |
Low Capacitance TVS/ESD Protection | |
11 | PJE5V0U8TB6 |
Pan Jit International |
Low Capacitance ESD Protection | |
12 | PJEC3V0V1WS |
Pan Jit International |
Very Low Capacitance TVS/ESD Protection |