PPJE8472B 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 200mA Features RDS(ON) , VGS@10V, ID@600mA<3Ω RDS(ON) , [email protected], ID@200mA<4Ω Advanced Trench Process Technology Specially Designed for Relay driver, Speed line drive, etc. Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 St.
RDS(ON) , VGS@10V, ID@600mA<3Ω
RDS(ON) , [email protected], ID@200mA<4Ω
Advanced Trench Process Technology
Specially Designed for Relay driver, Speed line drive, etc.
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std. (Halogen Free)
SOT-523
Mechanical Data
Case : SOT-523 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.00007 ounces, 0.002 grams
Marking : E2B
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PJE8400 |
Pan Jit International |
20V N-CHANNEL MOSFET | |
2 | PJE8401 |
Pan Jit International |
20V P-CHANNEL MOSFET | |
3 | PJE8403 |
Pan Jit International |
20V P-CHANNEL MOSFET | |
4 | PJE8404 |
Pan Jit International |
30V N-Channel MOSFET | |
5 | PJE8407 |
Pan Jit International |
20V P-CHANNEL MOSFET | |
6 | PJE8412 |
Pan Jit International |
30V N-Channel MOSFET | |
7 | PJE8438 |
Pan Jit International |
50V N-Channel MOSFET | |
8 | PJE138K |
PAN JIT |
50V N-Channel MOSFET | |
9 | PJE138L |
Pan Jit International |
60V N-Channel Enhancement Mode MOSFET | |
10 | PJE5V0M1FN2 |
Pan Jit International |
Low Capacitance TVS/ESD Protection | |
11 | PJE5V0U8TB6 |
Pan Jit International |
Low Capacitance ESD Protection | |
12 | PJEC3V0V1WS |
Pan Jit International |
Very Low Capacitance TVS/ESD Protection |