N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V MIN. - 55 MAX. 7 4.5 28 147 1.176 ± 30 570 7 150 UNIT A A A W W/K V mJ A ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 45 MAX. 0.85 UNIT K/W K/W June 199.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHW7N60E |
NXP |
PowerMOS transistors Avalanche energy rated | |
2 | PHW11N50E |
NXP |
PowerMOS transistors Avalanche energy rated | |
3 | PHW11N50E |
NXP |
PowerMOS transistors Avalanche energy rated | |
4 | PHW11N50E |
Philips |
PowerMOS transistors | |
5 | PHW13N40E |
NXP |
PowerMOS transistors Avalanche energy rated | |
6 | PHW14N50E |
NXP |
PowerMOS transistors Avalanche energy rated | |
7 | PHW20N50E |
NXP |
PowerMOS transistors Avalanche energy rated | |
8 | PHW35NQ20T |
NXP |
N-channel TrenchMOS transistor | |
9 | PHW45NQ10T |
NXP |
N-channel TrenchMOS transistor | |
10 | PHW50NQ15T |
NXP |
N-channel TrenchMOS transistor | |
11 | PHW80NQ10T |
NXP |
N-channel TrenchMOS transistor | |
12 | PHW8N50E |
NXP |
PowerMOS transistors Avalanche energy rated |