N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHW50NQ15T is supplied in the SOT429 (TO247) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT429 (TO247) 1 2 3 LIMITING VALUES Limit.
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 150 V ID = 50 A
g
RDS(ON) ≤ 35 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:
• d.c. to d.c. converters
• switched mode power supplies The PHW50NQ15T is supplied in the SOT429 (TO247) conventional leaded package.
PINNING
PIN 1 2 3 tab gate drain source drain DESCRIPTION
SOT429 (TO247)
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maxim.
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---|---|---|---|---|
1 | PHW11N50E |
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2 | PHW11N50E |
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