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PHW7N60 |
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| Part Number | PHW7N60 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling per... |
| Features |
Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V MIN. - 55 MAX. 7 4.5 28 147 1.176 ± 30 570 7 150 UNIT A A A W W/K V mJ A ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 45 MAX. 0.85 UNIT K/W K/W
June 199... |
| Document |
 PHW7N60 Data Sheet
PDF 56.23KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PHW7N60E |
NXP |
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| 2 | PHW11N50E |
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| 3 | PHW11N50E |
NXP |
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| 4 | PHW11N50E |
Philips |
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| 5 | PHW13N40E |
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