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N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP45NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB45NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHW45NQ10T is supplied in .
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
VDSS = 100 V ID = 47 A
g
RDS(ON) ≤ 25 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:
• d.c. to d.c. converters
• switched mode power supplies The PHP45NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB45NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHW45NQ10T is supplied in the SOT429 (TO247) conventional leaded package.
PINNING
PIN 1 2 3 tab .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PHW11N50E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 2 | PHW11N50E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 3 | PHW11N50E |
Philips |
PowerMOS transistors |
|
| 4 | PHW13N40E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 5 | PHW14N50E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 6 | PHW20N50E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 7 | PHW35NQ20T |
NXP |
N-channel TrenchMOS transistor |
|
| 8 | PHW50NQ15T |
NXP |
N-channel TrenchMOS transistor |
|
| 9 | PHW7N60 |
NXP |
PowerMOS transistor |
|
| 10 | PHW7N60E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 11 | PHW80NQ10T |
NXP |
N-channel TrenchMOS transistor |
|
| 12 | PHW8N50E |
NXP |
PowerMOS transistors Avalanche energy rated |
|