N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHW20N50E is supplied in the SOT429 (TO247) conventional leaded package. PINNING PIN 1 2 3 tab gate dra.
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHW20N50E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 500 V
g
ID = 20 A RDS(ON) ≤ 0.27 Ω
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHW20N50E is supplied in the SOT429 (TO247) conventional leaded package.
PINNING
PIN 1 2 3 ta.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHW11N50E |
NXP |
PowerMOS transistors Avalanche energy rated | |
2 | PHW11N50E |
NXP |
PowerMOS transistors Avalanche energy rated | |
3 | PHW11N50E |
Philips |
PowerMOS transistors | |
4 | PHW13N40E |
NXP |
PowerMOS transistors Avalanche energy rated | |
5 | PHW14N50E |
NXP |
PowerMOS transistors Avalanche energy rated | |
6 | PHW35NQ20T |
NXP |
N-channel TrenchMOS transistor | |
7 | PHW45NQ10T |
NXP |
N-channel TrenchMOS transistor | |
8 | PHW50NQ15T |
NXP |
N-channel TrenchMOS transistor | |
9 | PHW7N60 |
NXP |
PowerMOS transistor | |
10 | PHW7N60E |
NXP |
PowerMOS transistors Avalanche energy rated | |
11 | PHW80NQ10T |
NXP |
N-channel TrenchMOS transistor | |
12 | PHW8N50E |
NXP |
PowerMOS transistors Avalanche energy rated |