Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
PHW50NQ15T |
Click to view a larger image
| Part Number | PHW50NQ15T |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHW50NQ15T is suppli... |
| Features |
• ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 150 V ID = 50 A g RDS(ON) ≤ 35 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications: • d.c. to d.c. converters • switched mode power supplies The PHW50NQ15T is supplied in the SOT429 (TO247) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT429 (TO247) 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maxim... |
| Document |
 PHW50NQ15T Data Sheet
PDF 95.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PHW11N50E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 2 | PHW11N50E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 3 | PHW11N50E |
Philips |
PowerMOS transistors |
|
| 4 | PHW13N40E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 5 | PHW14N50E |
NXP |
PowerMOS transistors Avalanche energy rated |
|