PE6004 - semi one

PE6004 N-Channel Enhancement Mode Power MOSFET

The PE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS =60V,ID =4A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V ● High Power and current handing capability .

Features

● VDS =60V,ID =4A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
●Battery Switch
●DC/DC Converter PE6004 D G S Schematic diagram SOT-223 -3L top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junc.