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PE606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID3 22A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Tc = 25 °C 22 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID 14 .
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PE606DT |
UNIKC |
MOSFET |
|
| 2 | PE60 |
Vishay |
Power Panel 6W Potentiometer |
|
| 3 | PE6003 |
semi one |
N-Channel Enhancement Mode Power MOSFET |
|
| 4 | PE6004 |
semi one |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | PE6005 |
semi one |
N-Channel Enhancement Mode Power MOSFET |
|
| 6 | PE600BA |
UNIKC |
MOSFET |
|
| 7 | PE600SA |
UNIKC |
MOSFET |
|
| 8 | PE6018 |
semi one |
N-Channel Enhancement Mode Power MOSFET |
|
| 9 | PE601CA |
UNIKC |
MOSFET |
|
| 10 | PE6020K |
semi one |
N-Channel Enhancement Mode Power MOSFET |
|
| 11 | PE608N |
Nihon Inter Electronics |
DIODE MODULE 60A/800V |
|
| 12 | PE60N70 |
semi one |
N-Channel Enhancement Mode Power MOSFET |
|