PE6004 semi one N-Channel Enhancement Mode Power MOSFET Datasheet, en stock, prix

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PE6004

semi one
PE6004
PE6004 PE6004
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Part Number PE6004
Manufacturer semi one
Description The PE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in ...
Features
● VDS =60V,ID =4A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
●Battery Switch
●DC/DC Converter PE6004 D G S Schematic diagram SOT-223 -3L top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junc...

Document Datasheet PE6004 Data Sheet
PDF 196.23KB
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