PE60N70 - semi one

PE60N70 N-Channel Enhancement Mode Power MOSFET

The PE60N70 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =65A RDS(ON) < 12mΩ @ VGS=10V (Typ:10.2mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized aval.

Features

● VDS = 60V,ID =65A RDS(ON) < 12mΩ @ VGS=10V (Typ:10.2mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Application
● Power switching application
● Hard switched and High frequency circuits
● Uninterruptible power supply Schematic diagram Marking and pin assignment TO-252-2L top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Sou.