PE6020K - semi one

PE6020K N-Channel Enhancement Mode Power MOSFET

The PE6020K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EA.

Features

● VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply Marking and pin assignment TO-252-2L top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS.