P9NC60 - ST Microelectronics

P9NC60 STP9NC60

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERT.

Features

20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 9 5.7 36 125 1.0 Value STP9NC60 600 600 ±30 9 (
*) 5.7 (
*) 36 (
*) 40 0.32 3.5 2500
  – 55 to 150 (1)ISD ≤ 9A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX (
*) Limited only by Maximum Temperature Allowed Unit V V V A A A W W/°C V/ns V °C STP9NC60FP (
•)Pulse width limited by safe operating area Fe.