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P9NC60 |
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| Part Number | P9NC60 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge ... |
| Features |
20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 9 5.7 36 125 1.0
Value STP9NC60 600 600 ±30 9 (*) 5.7 (*) 36 (*) 40 0.32 3.5 2500 – 55 to 150 (1)ISD ≤ 9A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX (*) Limited only by Maximum Temperature Allowed Unit V V V A A A W W/°C V/ns V °C STP9NC60FP ( •)Pulse width limited by safe operating area Fe... |
| Document |
 P9NC60 Data Sheet
PDF 276.85KB |
| Distributor | Stock | Price | Buy |
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