P9N70 - Good-Ark

P9N70 SSFP9N70

StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Application ■ Switching application VDSS = 700V ID25 = 7..

Features

① dv/dt Peak Diode Recovery dv/dt ③ TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Max. 7.5 4.7 30 115 0.92 ±30 230 7.5 15.5 4.5
  –55 to +175 300(1.6mm from case) 10 Ibf
●in(1.1N
●m) Units A W W/ْ C V mJ A mJ V/ns ْC Thermal Resistance Parameter Min. Typ. Max. RθJC Junction-to-case — — 1.09 RθCS Case-to-Sink,Flat,Greased Surface — — 0.50 RθJA Junction-to-Ambient — — 62.5 Units ْC/W 1 SSFP9N70 StarMOST Power MOSFET Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Mi.