P9NC60FP - STMicroelectronics

P9NC60FP STP9NC60FP

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS ν HIGH CURRENT, HIGH SPEED SWITCHING ν SWITH MODE POWER SUPPLIES (SMPS) ν DC-AC CO.

Features

n- gate Voltage (R GS = 20 kΩ ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. O perating Junction Temperature o Value ST P9NC60 STP9NC60F P 600 600 ± 30 9.0 5.7 36 125 1.0 4.5  -65 to 150 150 (1) ISD ≤ 9A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ C V/ns V o o o 5.2 3.3 36 40 0.32 4.5 2000 C C 1/9 (
•) Pulse width limited by safe operating are.