P7NA60FI - STMicroelectronics

P7NA60FI N-Channel MOSFET

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s D.

Features

rent (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM(
•) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (
•) Pulse width limited by safe operating area November 1996 3 2 1 TO-220 3 2 1 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Val ue STP7NA60 STP7NA60FI 600 600 ± 30 7.2 4.4 4.6 2.8 29 29 125 45 1 0.36  2000 -65 to 150 150 Unit V V V A A A W W/oC V oC oC 1/10 STP7NA60/FI THERMAL DATA Rthj-case Rthj- amb Rt hc- sin k Tl.