P7NK30Z - STMicroelectronics

P7NK30Z STP7NK30Z

ucThe SuperMESH™ series is obtained through an dextreme optimization of ST’s well established rostrip-based PowerMESH™ layout. In addition to Ppushing on-resistance significantly down, special tecare is taken to ensure a very good dv/dt capability for the most demanding applications. leSuch series complements ST full range of high ovoltage Power MOSFETs inc.

Features

Type VDSS RDS(on) max ID Pw STF7NK30Z t(s)STP7NK30Z STD7NK30Z 300 V 300 V 300 V < 0.9 Ω < 0.9 Ω < 0.9 Ω 5 A 20 W 5 A 50 W 5 A 50 W uc
■ 100% avalanche tested rod
■ Extremely high dv/dt capability P
■ Gate charge minimized te
■ Very low intrinsic capacitances le
■ Very good manufacturing repeatability bsoApplications - O
■ Switching application t(s)Description ucThe SuperMESH™ series is obtained through an dextreme optimization of ST’s well established rostrip-based PowerMESH™ layout. In addition to Ppushing on-resistance significantly down, special tecare is taken to ensure a very good.