P5015BTF - UNIKC

P5015BTF N-Channel MOSFET

P5015BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 50mΩ @VGS = 10V 18A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Tc = 25 °C Tc = 100 °C.

Features

Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250mA 150 VDS = VGS, ID = 250mA 1 VDS = 0V, VGS = ±20V VDS = 120V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125 °C V 2 3 ±100 nA 1 mA 10 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 4.5V, ID = 4A VGS = 10V , ID = 18A VDS = 10V, ID = 18A 44 90 mΩ 37 50 30 S DYNAMIC Input Capacitance Ciss 4607 Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 182 pF Reverse Transfer Capacitance Crss 130 Gate Resistance Rg VGS .