P5010AV - UNIKC

P5010AV N-Channel MOSFET

P5010AV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 50mΩ @VGS = 10V 5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TA = 25 °C TA.

Features

MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance1 Forward Transconductance1 On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) gfs ID(ON) VGS = 0V, ID = 250mA 100 VDS = VGS, ID = 250mA 2 VDS = 0V, VGS = ±20V VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125 °C VGS = 10V, ID = 5A VDS = 10V, ID = 5A VDS = 10V, VGS = 10V 40 V 3 4 ±250 nA 1 mA 10 38 50 mΩ 6 S A DYNAMIC Input Capacitance Ciss 1750 Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 190 pF Re.