P5010AD - UNIKC

P5010AD N-Channel Transistor

P5010AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 50mΩ @VGS = 10V 23A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C .

Features

ource Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 100 2.0 3.0 4.0 ±250 Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V , TJ = 125°C 1 10 On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 90 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 15A 38 50 Forward Transconductance1 gfs VDS = 5V, ID = 15A 12 DYNAMIC Input Capacitance Ciss 1700 Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 207 Reverse Transfer Capacitance Crss .