P5010AS - UNIKC

P5010AS N-Channel MOSFET

P5010AS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 50mΩ @VGS = 10V 34A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID 34 TC = 100 °C 21 IDM 120 Avalanche.

Features

0V, ID = 250mA 100 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 2 3 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V , TJ = 125 °C 1 10 On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 120 Drain-Source On-State Resistance1 RDS(ON) VGS = 7V, ID = 10A VGS = 10V, ID = 15A 60 80 37 50 Forward Transconductance1 gfs VDS = 20V, ID = 15A 10 DYNAMIC Input Capacitance Output Capacitance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 1770 201 Reverse Transfer Capacitance Crss 137 Gate Re.