P5015ATF - UNIKC

P5015ATF N-Channel MOSFET

P5015ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 50mΩ @VGS = 10V 22A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C ID 22 TC = 100 °C 14 IDM 90 Avalanc.

Features

GS = 0V, ID = 250mA 150 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.5 2.5 4.0 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 Zero Gate Voltage Drain Current IDSS VDS = 120V, VGS = 0V VDS = 100V, VGS = 0V , TJ = 125 °C 1 10 On-State Drain Current1 ID(ON) VGS = 10V, VDS = 10V 90 Drain-Source On-State RFoerswisatradncTera1 nsconductance1 RDS(ON) gfs VGS = 10V, ID = 20A VDS = 25V, ID = 20A 40 50 40 DYNAMIC Input Capacitance Ciss Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz Reverse Transfer Capacitance Crss Total Gate Charge2 Qg Gate-Source Char.