The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVE.
eter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 4.2 2.6 16.8 100 0.8 3.5
–65 to 150
(
*)Limited only by maximum Temperature allowed
Value STP(B)4NC60(-1) 600 600 ±30 4.2(
*) 2.6(
*) 16.8(
*) 35 0.28 3.5 2500 STP4NC60FP
Unit V V V A A A W W/°C V/ns V °C
(
•)Pulse width limited by safe op.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P4NC60AFP |
STMicroelectronics |
N-CHANNEL MOSFET | |
2 | P4NC60FP |
ST Microelectronics |
STP4NC60FP | |
3 | P4NC50 |
STMicroelectronics |
STP4NC50 | |
4 | P4N05L |
Intersil Corporation |
RFP4N05L | |
5 | P4N150 |
STMicroelectronics |
N-CHANNEL MOSFET | |
6 | P4N20 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | P4N60 |
Fairchild Semiconductor |
SSP4N60 | |
8 | P4N80E |
Motorola |
MTP4N80E | |
9 | P4NA40F1 |
ST Microelectronics |
STP4NA40F1 | |
10 | P4NA60FI |
STMicroelectronics |
STP4NA60FI | |
11 | P4NA80 |
ST Microelectronics |
STP4NA80 N-Channel MOS Transistor | |
12 | P4NA80FI |
ST Microelectronics |
STP4NA80FI |