P4NC50 - STMicroelectronics

P4NC50 STP4NC50

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC C.

Features

nuos) at TC = 25°C ID Drain Current (continuos) at TC = 100°C IDM (q) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (
•)Pulse width limited by safe operating area October 2000 Value Unit STP4NC50 STP4NC50FP 500 V 500 V ±30 V 3.5 3.5(
*) A 2.2 2.2(
*) A 14 14(
*) A 80 40 W 0.64 0.32 W/°C 3.5 V/ns - 2000 V
  –65 to 150 °C 150 (1)ISD ≤3.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (
*).Limit.