P3NC60FP - S TMICROELECTRONICS

P3NC60FP STP3NC60FP

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CON.

Features

= 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
  –60 to 150 150 (1)ISD ≤ 3A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (
*)Limited only by maximum temperature allowed Value STP3NC60 600 600 ±30 3 1.9 12 80 0.64 3.5 2000 3 1.9(
*) 12(
*) 40 0.32 STP3NC60FP Unit V V V A A A W W/ °C V/ns °C °C (
•)Pulse width limite.