P3NA90FI - STMicroelectronics

P3NA90FI STP3NA90FI

STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P3NA 90 ST P3NA 90FI VDSS 900 V 900 V RDS(o n) < 5.3 Ω < 5.3 Ω ID 3A 1.9 A s TYPICAL RDS(on) = 4.4 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED s .

Features

ge T emperature Tj Max Operating Junction Temperature (
•)Pulse width limited by safe operating area March 1996 Value STP3NA90 S TP3NA 90F I 900 900 ± 30 3 1.9 2 1.2 12 12 100 40 1.25 0 .3 2 - 2000 -65 to 150 150 Unit V V V A A A W W/oC V oC oC 1/6 STP3NA90/FI THERMAL DATA Rt hj-ca se Rt hj- amb Rthc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO 220 0.8 IS OW ATT 220 3. 12 62.5 0.5 300 oC/ W oC/ W oC/ W oC AVALANCHE CHARACTERISTICS Symb ol .