P3NA80FI - STMicroelectronics

P3NA80FI STP3NA80FI

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-A.

Features

P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Value STP5NA80FI 800 800 ± 30 3.1 2 12.5 100 1.25  -65 to 150 150 2 1.3 12.5 40 0.32 2000 Unit V V V A A A W W/o C V o o C C (
•) Pulse width limited by safe operating area November 1993 1/10 www.DataSheet4U.com STP3NA80/FI THERMAL DAT.