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P1820HTFB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200V 150mΩ @VGS = 10V 18A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 .
wn Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 200 V 1 2 3 ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V, TJ = 125 °C 1 mA 10 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 10V, ID = 9A VGS = 4.5V, ID = 9A VDS = 10V, ID = 9A 117 150 mΩ 175 195 15 S DYNAMIC Input Capacitance Ciss 811 Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 137 pF Reverse Transfer Capacitance Crss 19 Total Gate Charge2 Gate-.
P1820HTFB - NIKO-SEM
NIKO-SEM N-Channel Enhancement Mode P1820HTFB Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUM.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | P1820HDB |
UNIKC |
N-Channel MOSFET |
|
| 2 | P1820 |
Alliance Semiconductor |
(P1818 - P1822) Low Power Mobile VGA EMI Reduction IC |
|
| 3 | P1820AD |
UNIKC |
N-Channel MOSFET |
|
| 4 | P1820AD |
NIKO-SEM |
N-Channel Transistor |
|
| 5 | P1820BD |
UNIKC |
N-Channel Transistor |
|
| 6 | P1821 |
Alliance Semiconductor |
(P1818 - P1822) Low Power Mobile VGA EMI Reduction IC |
|
| 7 | P1822 |
Alliance Semiconductor |
(P1818 - P1822) Low Power Mobile VGA EMI Reduction IC |
|
| 8 | P1825AD |
UNIKC |
N-Channel Transistor |
|
| 9 | P1825AT |
UNIKC |
N-Channel MOSFET |
|
| 10 | P1825HDB |
UNIKC |
N-Channel MOSFET |
|
| 11 | P1825HTFB |
UNIKC |
N-Channel MOSFET |
|
| 12 | P1825HTFB |
NIKO-SEM |
N-Channel MOSFET |
|