Features
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wn Voltage Gate Threshold Voltage Gate-Body Leakage
V(BR)DSS VGS(th) IGSS
VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V
200
V
1
2
3
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V, TJ = 125 °C
1 mA
10
Drain-Source On-State Resistance1
Forward Transconductance1
RDS(ON) gfs
VGS = 10V, ID = 9A VGS = 4.5V, ID = 9A VDS = 10V, ID = 9A
117 150 mΩ
175 195
15
S
DYNAMIC
Input Capacitance
Ciss
811
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
137
pF
Reverse Transfer Capacitance
Crss
19
Total Gate Charge2
Gate-...
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