P1825HDB - UNIKC

P1825HDB N-Channel MOSFET

P1825HDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 250V 230mΩ @VGS = 10V 18A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C.

Features

Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 250 V 1 2 3 ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 250V, VGS = 0V VDS = 200V, VGS = 0V , TJ = 125 °C 1 mA 10 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 4.5V, ID = 9A VGS = 10V, ID = 9A VDS = 10V, ID = 9A 210 286 mΩ 193 230 21 S DYNAMIC Input Capacitance Ciss 788 Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 115 pF Reverse Transfer Capacitance Crss Total Gate Charge2 Qg Gate-So.